Automated Defect and Correlation Length Analysis of Block Copolymer Thin Film Nanopatterns
نویسندگان
چکیده
Line patterns produced by lamellae- and cylinder-forming block copolymer (BCP) thin films are of widespread interest for their potential to enable nanoscale patterning over large areas. In order for such patterning methods to effectively integrate with current technologies, the resulting patterns need to have low defect densities, and be produced in a short timescale. To understand whether a given polymer or annealing method might potentially meet such challenges, it is necessary to examine the evolution of defects. Unfortunately, few tools are readily available to researchers, particularly those engaged in the synthesis and design of new polymeric systems with the potential for patterning, to measure defects in such line patterns. To this end, we present an image analysis tool, which we have developed and made available, to measure the characteristics of such patterns in an automated fashion. Additionally we apply the tool to six cylinder-forming polystyrene-block-poly(2-vinylpyridine) polymers thermally annealed to explore the relationship between the size of each polymer and measured characteristics including line period, line-width, defect density, line-edge roughness (LER), line-width roughness (LWR), and correlation length. Finally, we explore the line-edge roughness, line-width roughness, defect density, and correlation length as a function of the image area sampled to determine each in a more rigorous fashion.
منابع مشابه
Hierarchically Ordered Nanopatterns for Spatial Control of Biomolecules
The development and study of a benchtop, high-throughput, and inexpensive fabrication strategy to obtain hierarchical patterns of biomolecules with sub-50 nm resolution is presented. A diblock copolymer of polystyrene-b-poly(ethylene oxide), PS-b-PEO, is synthesized with biotin capping the PEO block and 4-bromostyrene copolymerized within the polystyrene block at 5 wt %. These two handles allow...
متن کاملDefects and Their Removal in Block Copolymer Thin Film Simulations
In recent years, there has been increased interest in using microphaseseparated block copolymer thin films as submicrometer/suboptical masks in next generation semiconductor and magnetic media fabrication. With the goals of removing metastable defects in block copolymer thin film simulations and potentially examining equilibrium defect populations, we report on two new numerical techniques that...
متن کاملPhotocatalytic printing of inorganic nanopatterns via poly(styrene-block-carbosilane) copolymer thin films on titania substrates.
Well-defined, ordered arrays of nanoscale depressions were obtained in linear-brush-type polystyrene-block-polycarbosilane (PS-b-PCS) diblock copolymer thin films by acetone vapor annealing and silica nanodot arrays were directly obtained from such thin films deposited on a titania substrate by one-step exposure to UV light as a result of transformation of the PCS units to silica, driven by the...
متن کاملLateral nanopatterns in thin diblock copolymer films induced by selective solvents.
Block copolymers have long been studied for their theories and applications especially in nanotechnology.1-5 They have periodic structures with 10-100 nm long microphase separated domains which can be controlled by the molecular weight and composition of the block copolymer. Regulating these two parameters, one can prepare thin films with different morphologies over large areas. The patterns fo...
متن کاملModulation of protein-surface interactions on nanopatterned polymer films.
The introduction of nanoscale features brings with it a high density of surface interface boundaries and effectively introduces an additional boundary material that exhibits properties different from the surrounding surfaces. We systematically varied the feature size of self-assembled polystyrene-block-poly(methyl methacrylate) copolymer nanopatterns from 13 to 200 nm and demonstrated that the ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره 10 شماره
صفحات -
تاریخ انتشار 2015